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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,841 pcs
|
3841 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage (If=20A, Tc=25°C) | |
| Halogen Free | |
| Junction to Case Thermal Resistance | |
| Lead Style | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current (tp=8.3ms) | |
| Operating Temperature | |
| Reverse Current @ VR=650V, TC=25°C | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The FFSB2065B is a 650V, 20A Silicon Carbide (SiC) Schottky diode from ON Semiconductor's EliteSiC family. SiC Schottky technology provides zero reverse recovery current and temperature-independent switching, enabling higher efficiency and frequency operation.
Key electrical specifications include a maximum repetitive peak reverse voltage of 650V and continuous forward current of 20A at case temperature ≤142°C (22.8A at ≤135°C). Forward voltage is typically 1.38V at 20A and 25°C, with a maximum of 1.7V. The diode is avalanche rated at 94 mJ and can withstand non-repetitive surge currents up to 84A for an 8.3ms half-sine pulse.
The device operates over a junction temperature range of -55°C to 175°C, with a junction-to-case thermal resistance of 0.98°C/W. It is offered in a TO-263-3 (D²Pak) surface mount package with supplier device package D²PAK-2. The part is Pb-free, Halogen Free/BFR Free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.40 | $5.40 |
| 10+ | $3.59 | $3.59 |
| 100+ | $2.49 | $2.49 |
| 500+ | $2.16 | $2.16 |
| 800+ | $1.89 | $1.89 |
| 2,400+ | $1.83 | $1.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
20 A at case temperature ≤142°C, or 22.8 A at ≤135°C.
Typically 1.38 V at 20 A and 25°C, maximum 1.7 V.
0 ns – no reverse recovery due to SiC Schottky technology.
TO-263-3 (D²Pak) surface mount package, with supplier device package D²PAK-2.
-55°C to 175°C.
84 A for an 8.3 ms half-sine pulse at 25°C.