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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| AEC-Q101 Qualified | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Current | |
| IF (Nominal @ TC < 157 °C) | |
| Lead Style | |
| Mounting Type | |
| Non-Repetitive Peak Forward Surge Current (tp=8.3ms) | |
| Non-Repetitive Peak Forward Surge Current @ tp = 10 µs | |
| Operating Temperature | |
| Ptot (Nominal @ TC=150 °C) | |
| Ptot (Nominal @ TC=25 °C) | |
| Repetitive Forward Surge Current (tp=8.3ms) | |
| Repetitive Peak Reverse Voltage | |
| Reverse Current (VR=1200V, TC=25°C) | |
| Reverse Recovery Time (trr) | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Thermal Resistance - Junction to Case | |
| VF (Typical/Maximum @ IF=20 A, TC=125 °C) | |
| VF (Typical/Maximum @ IF=20 A, TC=175 °C) | |
| Voltage |
The FFSB20120A-F085 is a Silicon Carbide (SiC) Schottky diode from onsemi's EliteSiC family, designed for high-efficiency power conversion. It offers a repetitive peak reverse voltage of 1200 V and a continuous forward current of 20 A at case temperatures below 157°C (32 A below 135°C).
This diode features zero reverse recovery time (trr = 0 ns), eliminating switching losses associated with conventional silicon diodes. Forward voltage ranges from 1.45 V (typical) to 1.75 V (maximum) at 20 A and 25°C. It can handle non-repetitive surge currents up to 1190 A for 10 µs pulses and 135 A for 8.3 ms half-sine pulses. Avalanche energy rating is 200 mJ.
The device is housed in a D²PAK-2L (TO-263-2L) surface-mount package with 2 leads and a tab. Maximum junction temperature is 175°C, with a junction-to-case thermal resistance of 0.45°C/W. Power dissipation is 333 W at 25°C and 55 W at 150°C.
The diode is AEC-Q101 qualified for automotive applications such as HEV/EV onboard chargers and DC-DC converters. It is offered in tape and reel packaging with a standard quantity of 800 pieces.
| Qty | Low | High |
|---|---|---|
| 1+ | $14.41 | $14.41 |
| 10+ | $10.76 | $10.76 |
| 100+ | $8.90 | $8.90 |
| 500+ | $8.42 | $8.42 |
| 800+ | $8.42 | $8.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V.
20 A at case temperature below 157°C, and 32 A below 135°C.
Typical 1.45 V, maximum 1.75 V at 25°C; at 125°C typical 1.7 V, maximum 2.0 V; at 175°C typical 2.0 V, maximum 2.4 V.
Zero reverse recovery time (trr = 0 ns).
D²PAK-2L (TO-263-2L) surface-mount package with 2 leads and tab.
135 A for 8.3 ms half-sine pulse; 1190 A at 25°C and 990 A at 150°C for 10 µs pulse.
-55°C to 175°C.