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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy | |
| Capacitance @ Vr, F | |
| Continuous Forward Current (Nominal @ TC < 157 °C) | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF=20 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=20 A, TC=175 °C) | |
| Halogen Free | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current | |
| Non-Repetitive Peak Forward Surge Current (Nominal @ TC=150 °C, 10 µs pulse) | |
| Non-Repetitive Peak Forward Surge Current (Nominal @ TC=25 °C, 10 µs pulse) | |
| Operating Temperature | |
| Operating Temperature Range | |
| Power Dissipation (Nominal @ TC=150 °C) | |
| Power Dissipation (Nominal @ TC=25 °C) | |
| Repetitive Forward Surge Current | |
| Reverse Current (Maximum @ VR=1200 V, TC=125 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=175 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=25 °C) | |
| Reverse Voltage | |
| SVHC Present | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance | |
| Total Capacitive Charge | |
| Voltage | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The onsemi FFSB20120A is a Silicon Carbide (SiC) Schottky diode from the EliteSiC family, rated for 1200V peak repetitive reverse voltage and a continuous forward current of 20A at case temperatures below 157°C, or 32A below 135°C. It is housed in a D2PAK-2L (TO-263-2L) surface mount package.
This diode features no reverse recovery current, enabling high-frequency operation with reduced EMI and switching losses. It is avalanche rated at 200 mJ and can handle non-repetitive peak forward surge currents up to 1190A (10 µs pulse at 25°C). Typical forward voltage is 1.45V at 20A and 25°C, rising to 2.0V at 175°C. Maximum reverse current is 200 µA at 25°C and 1200V.
The device is Pb-free, halogen free/BFR free, and RoHS compliant. It is suitable for power switching circuits, SMPS, solar inverters, and UPS applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $9.85 | $9.85 |
| 10+ | $6.75 | $6.75 |
| 100+ | $4.99 | $4.99 |
| 500+ | $4.66 | $4.66 |
| 800+ | $4.66 | $4.66 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage (VRRM) is 1200 V.
20 A at case temperature below 157°C, and 32 A below 135°C.
Typical 1.45 V at 25°C, maximum 1.75 V. At 175°C, typical is 2.0 V, maximum 2.4 V.
No. As a SiC Schottky diode, it has no reverse recovery current.
D2PAK-2L (TO-263-2L) surface mount package.
175 °C.
Yes, it is RoHS compliant, Pb-free, and halogen free/BFR free.