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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,800 pcs
|
12800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| AEC-Q101 | |
| AEC-Q101 Qualified | |
| Automotive Grade | |
| Average Rectified Current (Nominal @ TC < 146 °C) | |
| Average Rectified Current (Nominal @ TC < 25 °C) | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=175 °C) | |
| Halogen Free | |
| Max Junction Temperature | |
| Mounting Type | |
| Non Repetitive Peak Forward Surge Current (Nominal @ TC=150 °C, 10 µs) | |
| Non Repetitive Peak Forward Surge Current (Nominal @ TC=25 °C, 10 µs) | |
| Non-Repetitive Forward Surge Current @ TC=25°C, 8.3ms | |
| Operating Temperature | |
| Power Dissipation (Nominal @ TC=150 °C) | |
| Power Dissipation (Nominal @ TC=25 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=125 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=175 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage (Max) | |
| SVHC Present | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge @ V=400V | |
| Voltage | |
| capacitance (Typical @ VR = 200 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSB1065B-F085 is a Silicon Carbide (SiC) Schottky diode from onsemi's EliteSiC family. It features a maximum reverse voltage of 650V and a continuous forward current of 27A at case temperatures below 25°C (10A at 146°C). The diode offers zero reverse recovery time, enabling high-frequency switching with minimal losses. It is avalanche rated at 49 mJ and can withstand non-repetitive peak surge currents up to 650A (10 µs pulse).
Designed for demanding automotive applications, this diode is AEC-Q101 qualified and PPAP capable. It is suitable for HEV-EV onboard chargers and DC-DC converters where high efficiency and reliability are critical. The device operates over a junction temperature range of -55°C to 175°C, with a thermal resistance of 1.9°C/W from junction to case.
The FFSB1065B-F085 is housed in a D2PAK-2L (TO-263-2L) surface mount package, which provides excellent thermal performance and is compatible with standard reflow soldering processes. It is RoHS3 compliant and halogen free, meeting current environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.24 | $4.24 |
| 10+ | $2.86 | $2.86 |
| 100+ | $2.14 | $2.14 |
| 500+ | $1.91 | $1.91 |
| 800+ | $1.67 | $1.67 |
| 2,400+ | $1.59 | $1.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (VRRM) is 650V.
The continuous forward current is 27A at case temperature below 25°C, and 10A at case temperature below 146°C.
At 10A and 25°C, the typical forward voltage is 1.38V and maximum is 1.7V. At 125°C typical is 1.6V, maximum 2.0V. At 175°C typical is 1.72V, maximum 2.4V.
No, the FFSB1065B-F085 is a SiC Schottky diode with zero reverse recovery time (trr = 0 ns).
It is available in a D2PAK-2L (TO-263-2L) surface mount package.
The maximum junction temperature is 175°C.
Yes, it is AEC-Q101 qualified and PPAP capable.