FFSB10120A The FFSB10120A is a 1200 V, 10 A (21 A at lower temperature) Silicon Carbide Schottky diode from On Semiconductor. It offers zero reverse recovery time and is available in a D2PAK-3 surface mount package.
Mfr Part #:

FFSB10120A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FFSB10120A is a 1200 V, 10 A (21 A at lower temperature) Silicon Carbide Schottky diode from On Semiconductor. It offers zero reverse recovery time and is available in a D2PAK-3 surface mount package.
Total Stock: 3,793 pcs
$ Price Range: $3.67 - $8.20

FFSB10120A Available from 1 distributor

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FFSB10120A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Average Rectified Forward Current (Maximum @ TC < 135 °C)
Average Rectified Forward Current (Maximum @ TC < 164 °C)
Capacitance @ Vr, F
Current
Current - Reverse Leakage @ Vr
Halogen Free
Max Junction Temperature
Medical Grade
Military Grade
Mounting Type
Non-Repetitive Peak Forward Surge Current
Operating Temperature
Power Dissipation
Reverse Recovery Time (trr)
Single Pulse Avalanche Energy
Speed
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance - Junction to Case
Voltage
Voltage - DC Reverse (Vr) (Max)

FFSB10120A Description

Short technical summary and product information.

The FFSB10120A is a 1200 V Silicon Carbide (SiC) Schottky diode from On Semiconductor, part of the EliteSiC series. It is rated for 10 A continuous forward current at a case temperature below 164°C, and can handle up to 21 A when the case temperature is below 135°C. The diode features zero reverse recovery time (trr = 0 ns) and virtually no forward recovery, enabling high-frequency switching with minimal losses.

 

The device is avalanche rated at 100 mJ and can withstand non-repetitive peak forward surge currents up to 850 A. Maximum forward voltage is 1.75 V at 10 A and 25°C junction temperature. Reverse leakage current is limited to 200 µA at 1200 V reverse voltage.

 

The diode operates over a junction temperature range of -55°C to 175°C. It is housed in a D2PAK-3 (TO-263-3) surface mount package with a maximum thermal resistance of 0.53°C/W from junction to case. It is Pb-free, Halogen Free/BFR Free, and RoHS compliant.

FFSB10120A Quick Information

Product Type: SiC Schottky Diode
Series: EliteSiC
Canonical Name: FFSB10120A Silicon Carbide Schottky Diode
Subcategory: Single Diodes

FFSB10120A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FFSB10120A Estimated Pricing

Qty Low High
1+ $8.20 $8.20
10+ $5.58 $5.58
100+ $3.98 $3.98
500+ $3.67 $3.67
800+ $3.67 $3.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

FFSB10120A Features

  • Zero reverse recovery time.
  • 1200 V reverse voltage rating.
  • 10 A forward current at 164°C.
  • Surface mount D2PAK-3 package.
  • Avalanche energy rated 100 mJ.

FFSB10120A Applications

  • Power factor correction in SMPS.
  • Solar inverter boost circuits.
  • Uninterruptible power supplies.
  • High-frequency switching circuits.

FFSB10120A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the reverse voltage rating of FFSB10120A?

The repetitive peak reverse voltage is 1200 V.

What is the forward current rating?

10 A continuous at TC<164°C, or 21 A at TC<135°C.

What is the forward voltage drop?

Maximum 1.75 V at 10 A forward current and 25°C junction temperature.

Does this diode have reverse recovery time?

No, it has zero reverse recovery time (0 ns).

What package is available?

D2PAK-3 (TO-263-3) surface mount package. Note: datasheet lists D2PAK-2L variant.

What is the operating temperature range?

Junction temperature range is -55°C to 175°C.

Is the FFSB10120A avalanche rated?

Yes, single pulse avalanche energy is rated at 100 mJ.

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