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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Avalanche Energy (EAS) | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Current (Maximum @ TC < 147 °C) | |
| Forward Surge Current (Maximum @ TC = 150 °C, tp = 10 µs) | |
| Forward Surge Current (Maximum @ TC = 25 °C, tp = 10 µs) | |
| Forward Surge Current (Maximum @ TC = 25 °C, tp = 8.3 ms (half-sine) | |
| Forward Voltage (Typical/Maximum @ IF = 8 A, Tj = 125 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 8 A, Tj = 175 °C) | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Reverse Leakage Current (Typical/Maximum @ VR = 650 V, Tj = 125 °C) | |
| Reverse Leakage Current (Typical/Maximum @ VR = 650 V, Tj = 175 °C) | |
| Reverse Leakage Current (Typical/Maximum @ VR = 650 V, Tj = 25 °C) | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage (Vrrm) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge | |
| Voltage | |
| capacitance (Typical @ VR = 200 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSB0865B-F085 is a 650V, 10.1A Silicon Carbide (SiC) Schottky diode from On Semiconductor's EliteSiC family. It is designed for high-efficiency power conversion in automotive and industrial systems. The diode offers zero reverse recovery current, enabling higher switching frequencies and reduced EMI. It is rated for a maximum junction temperature of 175°C and provides avalanche energy capability of 33 mJ. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive HEV-EV onboard chargers and DC-DC converters. The D2PAK-2L surface mount package allows for compact PCB layouts and efficient thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.40 | $5.40 |
| 10+ | $3.35 | $3.35 |
| 100+ | $2.52 | $2.52 |
| 500+ | $2.20 | $2.20 |
| 800+ | $2.01 | $2.01 |
| 2,400+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage is 650 V.
The continuous forward current is 10.1 A at case temperature below 135°C, and 8.0 A at case temperature below 147°C.
No, as a SiC Schottky diode it has zero reverse recovery time (0 ns).
The typical forward voltage is 1.39 V, with a maximum of 1.7 V at IF = 8 A and Tj = 25°C.
It is available in a surface mount D2PAK-2L (TO-263-2) package.
Yes, it is AEC-Q101 qualified and PPAP capable.
The operating junction temperature range is -55°C to +175°C.