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FFSB0865B The FFSB0865B is a 650V, 10.1A Silicon Carbide Schottky diode from onsemi in a D2PAK-2 surface mount package. It features zero reverse recovery, high surge current capability, and a maximum junction temperature of 175°C.
Mfr Part #:

FFSB0865B

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FFSB0865B is a 650V, 10.1A Silicon Carbide Schottky diode from onsemi in a D2PAK-2 surface mount package. It features zero reverse recovery, high surge current capability, and a maximum junction temperature of 175°C.
✓ Total Stock: 7,200 pcs
$ Price Range: $1.18 - $3.53

FFSB0865B Available from 1 distributor

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✓ Non-Authorised
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7,200 pcs
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FFSB0865B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Current
Halogen Free
Mounting Type
Operating Temperature
SVHC Present
Speed
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Voltage
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FFSB0865B Description

Short technical summary and product information.

The FFSB0865B is a 650V, 10.1A Silicon Carbide (SiC) Schottky diode from onsemi, part of the EliteSiC series. It offers a peak repetitive reverse voltage of 650V and a continuous forward current of 10.1A when the case temperature is below 135°C, or 8.0A below 147°C.

 

Electrical characteristics include a typical forward voltage of 1.39V at 8A and 25°C (maximum 1.7V), and extremely low reverse leakage current of 0.5µA typical at 650V and 25°C. The diode has zero reverse recovery and no forward recovery, enabling high-frequency operation with reduced EMI. It is avalanche rated at 33mJ and can handle non-repetitive peak forward surge currents up to 577A at 25°C for a 10µs pulse.

 

Thermally, the device has a maximum junction temperature of 175°C and a junction-to-case thermal resistance of 2.05°C/W. It is housed in a D2PAK-2 (TO-263-2L) surface mount package, suitable for efficient heat dissipation. Typical applications include switch-mode power supplies (SMPS), solar inverters, UPS systems, and power switching circuits.

 

The FFSB0865B is RoHS compliant, Pb-Free, and Halogen Free/BFR Free as verified by the datasheet.

FFSB0865B Quick Information

Product Type: SiC Schottky Diode
Series: EliteSiC
Canonical Name: FFSB0865B Silicon Carbide (SiC) Schottky Diode, 650V, 10.1A, D2PAK-2
Subcategory: Silicon Carbide Schottky Diode

FFSB0865B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FFSB0865B Estimated Pricing

Qty Low High
1+ $3.53 $3.53
10+ $2.30 $2.30
100+ $1.60 $1.60
500+ $1.23 $1.23
800+ $1.18 $1.18

Estimated market price range - modelled values for guidance only, not live distributor offers.

FFSB0865B Features

  • 650V peak repetitive reverse voltage rating.
  • 10.1A continuous forward current capability.
  • Zero reverse recovery for high efficiency.
  • Avalanche rated at 33 mJ energy.
  • 175°C maximum junction temperature.

FFSB0865B Applications

  • Used in switch-mode power supplies (SMPS).
  • Ideal for solar inverter circuits.
  • Suitable for UPS power stages.
  • Applied in power factor correction (PFC).

FFSB0865B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the FFSB0865B?

650V.

What is the continuous forward current rating?

10.1A at case temperature below 135°C, 8.0A below 147°C.

What is the forward voltage drop?

Typical 1.39V at 8A and 25°C, maximum 1.7V.

Does this diode have reverse recovery?

No, it is a SiC Schottky diode with zero reverse recovery.

What is the package type?

D2PAK-2 (TO-263-2L) surface mount.

What is the maximum junction temperature?

175°C.

What is the surge current capability?

577A peak non-repetitive at 25°C for 10µs pulse.

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