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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,200 pcs
|
7200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Current Continuous (Maximum @ TC < 147 °C) | |
| Forward Surge Current Peak (Maximum @ TC = 150 °C, tP = 10 µs) | |
| Forward Surge Current Peak (Maximum @ TC = 25 °C, tP = 10 µs) | |
| Forward Voltage (Typical/Maximum @ IF = 8 A, Tj = 125 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 8 A, Tj = 175 °C) | |
| Halogen Free | |
| Max Junction Temperature | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current (Half-Sine) | |
| Operating Temperature | |
| Peak Repetitive Reverse Voltage | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TJ=125 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TJ=175 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TJ=25 °C) | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge | |
| Voltage | |
| capacitance (Typical @ VR = 200 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSB0865B is a 650V, 10.1A Silicon Carbide (SiC) Schottky diode from onsemi, part of the EliteSiC series. It offers a peak repetitive reverse voltage of 650V and a continuous forward current of 10.1A when the case temperature is below 135°C, or 8.0A below 147°C.
Electrical characteristics include a typical forward voltage of 1.39V at 8A and 25°C (maximum 1.7V), and extremely low reverse leakage current of 0.5µA typical at 650V and 25°C. The diode has zero reverse recovery and no forward recovery, enabling high-frequency operation with reduced EMI. It is avalanche rated at 33mJ and can handle non-repetitive peak forward surge currents up to 577A at 25°C for a 10µs pulse.
Thermally, the device has a maximum junction temperature of 175°C and a junction-to-case thermal resistance of 2.05°C/W. It is housed in a D2PAK-2 (TO-263-2L) surface mount package, suitable for efficient heat dissipation. Typical applications include switch-mode power supplies (SMPS), solar inverters, UPS systems, and power switching circuits.
The FFSB0865B is RoHS compliant, Pb-Free, and Halogen Free/BFR Free as verified by the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.53 | $3.53 |
| 10+ | $2.30 | $2.30 |
| 100+ | $1.60 | $1.60 |
| 500+ | $1.23 | $1.23 |
| 800+ | $1.18 | $1.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
10.1A at case temperature below 135°C, 8.0A below 147°C.
Typical 1.39V at 8A and 25°C, maximum 1.7V.
No, it is a SiC Schottky diode with zero reverse recovery.
D2PAK-2 (TO-263-2L) surface mount.
175°C.
577A peak non-repetitive at 25°C for 10µs pulse.