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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,868 pcs
|
3868 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Rectified Current (Maximum @ TC = 135 °C) | |
| Average Rectified Current (Maximum @ TC = 152 °C) | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF = 6 A, TC = 125 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 6 A, TC = 175 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 6 A, TC = 25 °C) | |
| Halogen Free | |
| Junction Temperature Max | |
| Mounting Type | |
| Non Repetitive Peak Forward Surge Current (Maximum @ TC = 150 °C, 10 µs) | |
| Non Repetitive Peak Forward Surge Current (Maximum @ TC = 25 °C, 10 µs) | |
| Non-Repetitive Forward Surge Current (Half-Sine) | |
| Operating Temperature | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current | |
| Reverse Current (Maximum @ VR = 650 V, TC = 125 °C) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 175 °C) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 25 °C) | |
| Reverse Recovery Time (trr) | |
| Single Pulse Avalanche Energy (EAS) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge (Qc) | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) | |
| capacitance (Typical @ VR = 1 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 200 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSB0665A is a 650 V, 6 A Silicon Carbide (SiC) Schottky diode from On Semiconductor, designed for high-efficiency power conversion. It offers zero reverse recovery time (0 ns) due to its SiC Schottky technology, which eliminates switching losses associated with conventional silicon diodes.
Key electrical characteristics include a typical forward voltage of 1.50 V at 6 A and 25°C, with a maximum forward voltage of 1.75 V. Reverse leakage current is 200 µA maximum at 650 V and 25°C. The diode can handle repetitive surge currents up to 24 A (8.3 ms half-sine) and non-repetitive surges up to 430 A (10 µs pulse). Avalanche energy rating is 36 mJ.
The device is housed in a surface-mount D2PAK-3 (TO-263-3) package with a maximum junction temperature of 175°C and thermal resistance of 2.3 °C/W from junction to case. It is Pb-free, Halogen Free/BFR Free, and RoHS compliant according to the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.41 | $3.41 |
| 10+ | $2.22 | $2.22 |
| 100+ | $1.41 | $1.41 |
| 500+ | $1.18 | $1.18 |
| 800+ | $1.12 | $1.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage is 650 V.
The continuous forward current is 6 A at case temperature below 152°C, and 9 A below 135°C.
Typical forward voltage is 1.50 V at 6 A and 25°C; maximum is 1.75 V at 6 A and 25°C.
No, it has zero reverse recovery time (0 ns) due to SiC Schottky technology.
It is available in surface-mount D2PAK-3 (TO-263-3) package.
Maximum junction temperature is 175°C.