FFPF08S60STTU The FFPF08S60STTU is a 600V, 8A fast recovery rectifier diode from ON Semiconductor. It features a 30ns maximum reverse recovery time and is housed in a TO-220F-2L package.
Mfr Part #:

FFPF08S60STTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FFPF08S60STTU is a 600V, 8A fast recovery rectifier diode from ON Semiconductor. It features a 30ns maximum reverse recovery time and is housed in a TO-220F-2L package.
Total Stock: 31,000 pcs
$ Price Range: $0.52

FFPF08S60STTU Available from 1 distributor

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FFPF08S60STTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Avalanche Energy
Current
IR (Maximum @ VR = 600 V, TC = 125 °C)
IR (Maximum @ VR = 600 V, TC = 25 °C)
Mounting Type
Non-Repetitive Peak Surge Current
Operating Junction Temperature
Operating Temperature
Peak Repetitive Reverse Voltage
Reverse Recovery Time (trr)
Speed
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance - Junction to Case
VF (Typical @ IF = 8 A, TC = 125 °C)
VF (Typical/Maximum @ IF = 8 A, TC = 25 °C)
Voltage
trr (Maximum @ IF = 1 A, diF/dt = 100 A/µs, VR = 30 V, TC = 25 °C)
trr (Typical @ IF = 8 A, diF/dt = 200 A/µs, VR = 390 V, TC = 125 °C)
trr (Typical/Maximum @ IF = 8 A, diF/dt = 200 A/µs, VR = 390 V, TC = 25 °C)

FFPF08S60STTU Description

Short technical summary and product information.

The FFPF08S60STTU is a 600V, 8A Stealth II rectifier diode from ON Semiconductor, designed with soft recovery characteristics for reduced EMI and ringing. This silicon nitride passivated, ion-implanted epitaxial planar construction device offers low stored charge and hyperfast soft recovery, making it ideal for high-efficiency switching power supplies and power factor correction circuits.

 

Key electrical specifications include a peak repetitive reverse voltage of 600V, average rectified forward current of 8A at TC=95°C, and a non-repetitive peak surge current of 80A. The forward voltage is typically 2.1V at 8A and 25°C, with a maximum of 2.6V. The reverse recovery time is 30ns maximum at 8A and 25°C, with a typical value of 19ns. The device also features a minimum avalanche energy of 20mJ.

 

The diode is packaged in a TO-220-2 Full Pack (TO-220F-2L) case, which provides full isolation for through-hole mounting. The maximum thermal resistance junction-to-case is 3.4°C/W, and the operating junction temperature range is -65°C to +175°C. The device is Pb-Free and RoHS compliant.

FFPF08S60STTU Quick Information

Product Type: Stealth Rectifier Diode
Series: Stealth II
Canonical Name: ON Semiconductor FFPF08S60STTU - 600V, 8A Stealth Rectifier Diode
Subcategory: Fast Recovery Rectifier Diode

FFPF08S60STTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FFPF08S60STTU Estimated Pricing

Qty Low High
1,000+ $0.52 $0.52

Estimated market price range - modelled values for guidance only, not live distributor offers.

FFPF08S60STTU Features

  • 600V repetitive reverse voltage rating.
  • 8A average forward current capability.
  • Fast recovery 30ns maximum trr.
  • Avalanche energy rated at 20mJ.
  • Soft recovery characteristics for low EMI.

FFPF08S60STTU Applications

  • Used as boost diode in PFC circuits.
  • Ideal for freewheeling diode in SMPS.
  • Suitable for high-frequency switching power supplies.
  • Employed in power switching circuits.

FFPF08S60STTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the peak repetitive reverse voltage of the FFPF08S60STTU?

600V.

What is the average rectified forward current rating?

8A at case temperature 95°C.

What is the forward voltage drop at 8A and 25°C?

Typical 2.1V, maximum 2.6V.

What is the reverse recovery time?

Maximum 30ns at 8A, 25°C; typical 19ns.

What is the package type of the FFPF08S60STTU?

TO-220-2 Full Pack (TO-220F-2L).

What is the operating junction temperature range?

-65°C to +175°C.

Does the FFPF08S60STTU have avalanche energy rating?

Yes, minimum 20mJ.

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