FFB5551 The FFB5551 is a dual NPN bipolar transistor array from onsemi, featuring a 160V collector-emitter breakdown voltage and 200mW power dissipation in a compact SC-70-6 surface-mount package.
Mfr Part #:

FFB5551

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FFB5551 is a dual NPN bipolar transistor array from onsemi, featuring a 160V collector-emitter breakdown voltage and 200mW power dissipation in a compact SC-70-6 surface-mount package.
✓ Total Stock: 382,034 pcs
$ Price Range: $0.04 - $0.17

FFB5551 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
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361,600 pcs
361600 pcs On Request 1 On Request On Request On Request On Request On Request
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14,100 pcs
14100 pcs On Request 1 On Request On Request 18+ On Request On Request
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3,759 pcs
3759 pcs On Request 1 On Request On Request On Request On Request On Request
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2,575 pcs
2575 pcs On Request 1 On Request On Request 18+ On Request On Request

FFB5551 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FFB5551 Description

Short technical summary and product information.

The FFB5551 is a dual NPN bipolar junction transistor array designed for general-purpose switching and amplification applications. Each transistor offers a collector-emitter breakdown voltage of 160V and a total power dissipation of 200mW. The device provides a minimum DC current gain (hFE) of 80 at 10mA collector current and 5V Vce, with a maximum collector-emitter saturation voltage of 200mV at 5mA base current and 50mA collector current. The transition frequency (ft) is 300MHz, making it suitable for moderate-speed switching circuits.

 

The transistors are housed in a compact SC-88 (SC-70-6) surface-mount package, which is ideal for space-constrained designs. The operating junction temperature range is -55°C to 150°C, allowing use in harsh environments. The dual configuration saves board space and improves matching between the two transistors compared to discrete components.

 

This component is RoHS3 compliant and REACH unaffected, though compliance data is unverified. The FFB5551 is commonly used in high-voltage switching, signal amplification, and driver circuits in consumer electronics, automotive systems, and industrial controls.

FFB5551 Quick Information

Product Type: Bipolar Transistor Array
Series: FFB5551
Canonical Name: FFB5551 - 2 NPN Dual Bipolar Transistor Array
Subcategory: Dual NPN Transistor

FFB5551 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FFB5551 Estimated Pricing

Qty Low High
1+ $0.17 $0.17
10+ $0.13 $0.13
100+ $0.08 $0.08
500+ $0.05 $0.05
1,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

FFB5551 Features

  • Dual NPN transistor in one package.
  • 160V collector-emitter breakdown voltage.
  • 200mW power dissipation rating.
  • 300MHz transition frequency.
  • Surface mount SC-70-6 package.

FFB5551 Applications

  • Used in high-voltage switching circuits.
  • Ideal for signal amplification stages.
  • Suitable for compact consumer electronics.
  • Common in automotive control modules.

FFB5551 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the FFB5551?

160V.

What package does the FFB5551 come in?

SC-88 (SC-70-6) surface mount package.

What is the operating temperature range of the FFB5551?

-55°C to 150°C (junction).

Is the FFB5551 RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the DC current gain (hFE) of the FFB5551?

Minimum 80 at 10mA collector current and 5V Vce.

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