| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 1922+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Medical Grade | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The FFB3946 is a complementary NPN/PNP bipolar transistor array designed for general-purpose switching and amplification applications. Manufactured by ON Semiconductor, this device integrates two transistors in a single surface-mount package, offering space savings and matched performance.
Key electrical specifications include a collector-emitter breakdown voltage of 40V, a maximum collector current of 0.2A, and a DC current gain (hFE) of 100 minimum at 10mA collector current. The transition frequency is 200 MHz, suitable for low-frequency switching and signal amplification. Maximum power dissipation is 300 mW, with an operating temperature range of -55°C to 150°C.
The part is housed in a compact 6-pin SC-88 (SC-70-6) package, also known as SOT-363, with a surface-mount mounting type. The device is RoHS3 compliant, REACH unaffected, and has an MSL of 1 (unlimited). This transistor array is ideal for applications requiring matched NPN and PNP characteristics in a small footprint, such as audio amplifiers, driver stages, and logic level shifting.
The collector-emitter breakdown voltage (Vce) is 40V maximum.
It is available in a surface-mount SC-88 (SC-70-6) package, also known as SOT-363.
The operating temperature range is -55°C to 150°C (junction).
Yes, it is listed as RoHS3 compliant, though this is unverified.
The minimum hFE is 100 at 10mA collector current and 1V Vce.
The transition frequency (fT) is 200 MHz.
The maximum power dissipation is 300 mW.