FFB2907A

The FFB2907A is a dual PNP bipolar junction transistor array configured as two independent PNP transistors in a single SC70-6 surface-mount package. It is designed for general-purpose amplification and switching applications with collector currents up to 500 mA. The part is manufactured by ON Semiconductor (formerly Fairchild Semiconductor, Process 63).

Electrical characteristics include a maximum collector-emitter voltage (VCEO) of -60 V, collector-base voltage (VCBO) of -60 V, emitter-base voltage (VEBO) of -5 V, and a continuous collector current rating of -600 mA. The minimum DC current gain (hFE) is 100 at 150 mA collector current and 10 V collector-emitter voltage, and the maximum collector-emitter saturation voltage is 1.6 V at 500 mA with 50 mA base current. The typical transition frequency is 250 MHz.

The device can dissipate up to 300 mW in the SC70-6 package with a thermal resistance of 415°C/W junction-to-ambient. The junction temperature range is -55°C to 150°C. Given the moderate power rating, derating above 25°C is required at 2.4 mW/°C.

This dual-transistor array is suitable for compact designs where board space is limited, providing matched characteristics in a small footprint. It is available in tape and reel packaging for high-volume assembly.