| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,398 pcs
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7398 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The Infineon FF900R12IP4 is a high-performance IGBT module belonging to the PrimePACK™2 family. It is engineered with Trench/Fieldstop IGBT4 technology and an Emitter Controlled 4 diode, offering robust performance for demanding applications.
Key electrical characteristics include a maximum collector-emitter voltage of 1200V and a continuous DC collector current of 900A at 100°C case temperature. The module boasts a high short circuit capability and a low VCEsat with a positive temperature coefficient, ensuring stability and reliability.
Mechanically, the FF900R12IP4 features a 4kV AC 1min insulation strength and a package with a Comparative Tracking Index (CTI) greater than 400. It is designed for high power density and thermal cycling capability, making it suitable for applications such as auxiliary inverters, high power converters, motor drives, traction inverters, UPS systems, and wind turbines.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) is 1200V.
The continuous DC collector current (IC nom) is 900A at a case temperature of 100°C.
The total power dissipation (Ptot) is 5.1kW at a case temperature of 25°C.
The gate-emitter peak voltage (VGES) is ±20V.
The typical collector-emitter saturation voltage (VCEsat) at 25°C is 1.7V.
The typical gate threshold voltage (VGEth) is 5.8V.
The module has an insulation strength of 4kV AC for 1 minute.