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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon FF600R12ME4AB11BOSA1 is a high-power IGBT module designed for demanding applications. It features a maximum collector-emitter breakdown voltage of 1200V and a significant power dissipation capability of 3350W.
This module exhibits a typical Vce(on) of 2.1V at 15V Vge and 600A, with a low collector leakage current of 3mA maximum. The input capacitance (Cies) is rated at 37nF at 25V.
Designed for through-hole mounting, the FF600R12ME4AB11BOSA1 operates within a temperature range of -40°C to 150°C. Its robust construction and electrical characteristics make it suitable for various power electronic systems.
This IGBT module is part of Infineon's extensive range of power semiconductor solutions, offering reliability and performance for industrial and commercial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 1200V.
The power dissipation is 3350W.
The typical Vce(on) is 2.1V at 15V Vge and 600A.
The operating temperature range is -40°C to 150°C.
It is designed for through-hole mounting.