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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-04-29 04:15:32 |
| Category | |
| Manufacturer Name | |
| Average Rectified Forward Current | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage | |
| IR (@ TA=100 °C, rated VR) | |
| IR (@ TA=25 °C, rated VR) | |
| Maximum Repetitive Reverse Voltage | |
| Mounting Type | |
| Non-Repetitive Peak Forward Surge Current | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Power Dissipation | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Ambient | |
| Thermal Resistance, Junction to Lead | |
| Voltage |
The FES16DT is a fast recovery rectifier diode from On Semiconductor, designed for high-efficiency power conversion applications. It features a maximum repetitive reverse voltage of 200V and an average rectified forward current of 16A at 100°C. The diode offers a low forward voltage drop of 0.95V at 8A, contributing to reduced power losses. With a reverse recovery time of 35ns, it is suitable for high-frequency switching circuits. The device is housed in a TO-220-2 through-hole package, providing robust thermal performance with a junction-to-lead thermal resistance of 1.2°C/W and a junction-to-ambient thermal resistance of 16°C/W. It can operate over a junction temperature range of -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.35 | $0.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
16A at TA=100°C with 0.375" lead length.
0.95V at 8A forward current.
35ns under test conditions IF=0.5A, IR=1.0A, IRR=0.25A.
TO-220-2 through-hole package.
-65°C to 150°C.
250A for an 8.3ms single half-sine-wave.