Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Diode Configuration | |
| Mounting Type | |
| Operating Temperature | |
| Speed | |
| Supplier Device Package | |
| Technology | |
| Voltage |
The FERD40L60CTS is a field effect rectifier diode (FERD) array from STMicroelectronics, featuring two 20A diodes in a common cathode configuration. It is rated for 60V reverse voltage and offers a low typical forward voltage of 545 mV at 20 A, minimizing power losses. The reverse leakage current is typically 1.1 mA at 60 V, and the device exhibits fast recovery speed (≤500ns, >200mA), suitable for switching applications.
This diode array is housed in a through-hole TO-220-3 package, with the supplier device package designated as TO-220. The operating temperature range extends up to 150°C, making it suitable for power supply and converter designs. The common cathode layout simplifies PCB layout and reduces component count in rectification and freewheeling circuits.
The FERD technology combines the benefits of Schottky and fast recovery diodes, providing low forward voltage drop while maintaining good switching performance. This part is ideal for applications requiring high efficiency and compact design.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.53 | $0.53 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical forward voltage is 545 mV at 20 A.
The maximum reverse leakage current is 1.1 mA at 60 V.
It is a 1 pair common cathode configuration.
It is available in a TO-220-3 through-hole package (supplier device package TO-220).
The maximum operating temperature is 150°C.
It uses Field Effect Rectifier Diode (FERD) technology.
It is a fast recovery diode with recovery time ≤500ns at >200mA.