| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,090 pcs
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1090 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The FEP16JTD is a fast recovery rectifier diode array manufactured by ON Semiconductor. It consists of one pair of series-connected diodes and is rated for a maximum repetitive reverse voltage of 600 V and an average rectified forward current of 16 A. The device has a reverse recovery time of 50 ns measured at IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A, and a maximum forward voltage of 1.5 V at a forward current of 8 A.
Electrical characteristics include a maximum reverse current of 10 µA at rated VR of 600 V at 25°C and 500 µA at 100°C. Total capacitance is 60 pF at VR = 4 V and 1 MHz. The part is capable of handling a non-repetitive peak forward surge current of 200 A for one 8.3 ms half-sine-wave, with a maximum power dissipation of 8.33 W and thermal resistance of 15 °C/W junction-to-ambient and 2.2 °C/W junction-to-lead.
The FEP16JTD is housed in a TO-220-3 through-hole package, allowing convenient PCB mounting in power conversion and rectification circuits. Its fast recovery characteristics are suitable for switching power supplies and output rectification where low reverse recovery time is important. The device operates over a junction temperature range of -55°C to +150°C.
600 V.
16 A at .375" lead length, TA = 100°C.
1.5 V maximum.
50 ns at IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A.
TO-220-3 through-hole.
One pair series connection.
200 A for an 8.3 ms single half-sine-wave.