FEP16GT

The FEP16GT is a fast recovery rectifier diode array from On Semiconductor, configured as one pair of common cathode diodes in a TO-220-3 through-hole package. It is rated for a maximum repetitive reverse voltage of 400 V and an average rectified forward current of 16 A (at TA = 100°C with 0.375" lead length). The device features a low forward voltage drop of 1.3 V maximum at 8 A, and a fast reverse recovery time of 50 ns maximum.

Electrical characteristics include a non-repetitive peak forward surge current rating of 200 A (8.3 ms single half-sine-wave) and a reverse leakage current of 10 µA maximum at rated voltage and 25°C, increasing to 500 µA at 100°C. Typical total capacitance is 60 pF at 4 V and 1 MHz. Thermal resistance is 15°C/W junction-to-ambient and 2.2°C/W junction-to-lead, with a power dissipation of 8.33 W.

The device is well-suited for high-frequency rectification and freewheeling applications where fast switching and low losses are required. The common cathode configuration simplifies PCB layout for dual-diode designs. Operating junction and storage temperature range is -55°C to +150°C.