| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FEP16DTD is a fast recovery diode array manufactured by On Semiconductor, configured as a common cathode pair with two diodes in series connection. It is rated for a maximum repetitive reverse voltage of 200V and an average rectified forward current of 16A (8A per diode). The device offers a typical forward voltage of 0.95V at 8A and a fast reverse recovery time of 35ns, making it suitable for high-frequency rectification and switching power supply applications.
Packaged in a through-hole TO-220-3 case, the FEP16DTD provides robust thermal performance with a maximum junction-to-ambient thermal resistance of 15°C/W and junction-to-lead resistance of 2.2°C/W. It can handle non-repetitive peak forward surge currents up to 200A. The operating junction temperature range is -55°C to 150°C.
This diode array is designed for use in power conversion circuits, freewheeling diodes, and snubber networks where fast switching and low forward voltage drop are critical. The glass passivated junction ensures high reliability and stability over temperature.
200V
16A (8A per diode) at TA=100°C with 0.375" lead length
35ns typical (IF=0.5A, IR=1.0A, IRR=0.25A)
0.95V typical at 8A
TO-220-3 through-hole
-55°C to 150°C
200A non-repetitive peak forward surge current (8.3ms single half-sine-wave)