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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Rectified Forward Current (IF(AV)) | |
| Current | |
| Diode Configuration | |
| Forward Voltage (Typical @ 8A) | |
| I R Typical (Typical @ T_A=100 °C, @ rated V_R) | |
| I R Typical (Typical @ T_A=25 °C, @ rated V_R) | |
| Maximum Repetitive Reverse Voltage (VRRM) | |
| Mounting Type | |
| Non-repetitive Peak Forward Surge Current (IFSM) | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Thermal Resistance Junction to Ambient (RθJA) | |
| Thermal Resistance Junction to Lead (RθJL) | |
| Total Capacitance (Typical @ 4V, 1MHz) | |
| Voltage |
The FEP16DTA is a fast recovery diode array from On Semiconductor, configured as a 1 pair common anode. It is rated for a maximum repetitive reverse voltage of 200V and an average rectified forward current of 16A. The device can handle non-repetitive peak forward surge currents up to 200A. Typical forward voltage is 1.3V at 8A forward current. Reverse recovery time is 35ns, making it suitable for high-speed switching applications. Reverse current is typically 10µA at 25°C and 500µA at 100°C. Total capacitance is 85pF typical at 4V and 1MHz. Maximum power dissipation is 8.33W with junction-to-ambient thermal resistance of 15°C/W and junction-to-lead thermal resistance of 2.2°C/W. The operating junction temperature range is -55°C to 150°C. The device is through-hole mounted in a TO-220-3 package. The glass passivated construction ensures high reliability and low forward voltage drop.
200V.
16A.
1.3V.
35ns.
TO-220-3 through-hole package.
10µA.
-55°C to 150°C.