FDZ375P The FDZ375P is a P-Channel MOSFET from ON Semiconductor, rated for 20V drain-source voltage and 3.7A continuous drain current. It features a low on-resistance of 78mOhm and comes in a compact 4-WLCSP surface mount package.
Mfr Part #:

FDZ375P

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDZ375P is a P-Channel MOSFET from ON Semiconductor, rated for 20V drain-source voltage and 3.7A continuous drain current. It features a low on-resistance of 78mOhm and comes in a compact 4-WLCSP surface mount package.
✓ Total Stock: 225,467 pcs
$ Price Range: $1.01

FDZ375P Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
205,467 pcs
205467 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
20,000 pcs
20000 pcs On Request 1 On Request On Request 12+ On Request On Request

FDZ375P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDZ375P Description

Short technical summary and product information.

The FDZ375P is a P-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for load switching and power management applications requiring low voltage operation. The device offers a maximum drain-source voltage of 20V and a continuous drain current of 3.7A at ambient temperature.

 

Key electrical characteristics include a maximum on-resistance of 78mOhm at Vgs = 4.5V and Id = 2A, and a typical threshold voltage of 1.2V at 250µA. The gate-source voltage rating is ±8V. The device features a gate charge of 15nC at Vgs = 4.5V and input capacitance of 865pF at Vds = 10V, enabling efficient switching performance.

 

The FDZ375P is housed in a 4-XFBGA, WLCSP package with a supplier device package of 4-WLCSP (1x1mm). It supports surface mount mounting and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 1.7W at ambient temperature.

 

This MOSFET is suitable for portable electronics, battery protection circuits, and other low-voltage power management systems where space is critical. The device is RoHS3 compliant and has an MSL rating of Level 1 (unlimited).

FDZ375P Quick Information

Product Type: MOSFET
Canonical Name: FDZ375P P-Channel MOSFET
Subcategory: P-Channel MOSFET

FDZ375P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDZ375P Estimated Pricing

Qty Low High
5,000+ $1.01 $1.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDZ375P Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current rating of 3.7A.
  • Low on-resistance of 78mOhm at 4.5V.
  • Compact 4-WLCSP surface mount package.
  • RoHS3 compliant and MSL Level 1.

FDZ375P Applications

  • Ideal for load switching in portable devices.
  • Used in battery protection circuits.
  • Suitable for power management in wearables.
  • Applicable in low-voltage DC-DC converters.

FDZ375P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDZ375P?

20V maximum.

What is the continuous drain current?

3.7A at ambient temperature.

What is the on-resistance?

78mOhm maximum at Vgs=4.5V, Id=2A.

What package does the FDZ375P come in?

4-XFBGA, WLCSP (4-WLCSP 1x1mm).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FDZ375P RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the gate threshold voltage?

1.2V maximum at Id=250µA.

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