| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDZ291P is a P-Channel MOSFET designed by On Semiconductor using advanced PowerTrench technology. It is specified for a maximum drain-source voltage of -20V and a continuous drain current of -4.6A at 25°C ambient. The device offers low on-resistance: 40mOhm maximum at Vgs=-4.5V, with typical values of 60mOhm at -2.5V and 160mOhm at -1.5V, enabling efficient switching at low gate voltages. The gate threshold voltage ranges from -0.4V to -1.0V, and the total gate charge is 13nC typical at Vgs=-4.5V, contributing to low switching losses. Input capacitance is 1010pF, output capacitance 160pF, and reverse transfer capacitance 80pF at Vds=-10V. Maximum power dissipation is 1.7W at 25°C ambient. The MOSFET is housed in a 9-VFBGA surface mount package (9-BGA 1.5x1.6mm), providing ultra-thin profile and excellent thermal transfer characteristics, with junction-to-ambient thermal resistance of 72°C/W. Typical applications include battery management, load switching, and battery protection circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.19 | $0.19 |
| 10+ | $1.71 | $1.71 |
| 100+ | $1.63 | $1.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is -20 V (negative polarity indicating P-Channel).
The FDZ291P is available in a 9-VFBGA surface mount package, specifically a 9-BGA (1.5x1.6mm) supplier device package.
The operating and storage junction temperature range is -55°C to +150°C.
The FDZ291P is listed as RoHS3 Compliant, but this information is unverified and should be confirmed with the supplier.
At Vgs=-4.5V and Id=-4.6A, the maximum Rds(on) is 40mOhm. Typical values are 60mOhm at Vgs=-2.5V and 160mOhm at Vgs=-1.5V.
The gate threshold voltage (Vgs(th)) ranges from -0.4V (minimum) to -1.0V (maximum) at Id=-250µA.