| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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49,534 pcs
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49534 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name |
The FDZ203N from ON Semiconductor is an N-Channel MOSFET belonging to the PowerTrench® series. It features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 7.5A at 25°C. The device offers a low Rds On of 18mOhm at 7.5A and 4.5V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 1.5V maximum at 250µA.
Key electrical characteristics include an input capacitance (Ciss) of 1127pF maximum at 10V and a maximum power dissipation of 1.6W. The operating temperature range is -55°C to 150°C.
This MOSFET is packaged in a 9-BGA (2x2.1) or 9-WFBGA format and is designed for surface mounting. The drive voltage ranges from 2.5V to 4.5V, and the maximum gate-source voltage is ±12V.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDZ203N operates over a junction temperature range of -55°C to 150°C.
The maximum drain-to-source voltage (Vdss) is 20V.
The continuous drain current (Id) is 7.5A at 25°C ambient temperature.
The maximum on-resistance (Rds(on)) is 18mOhm at 7.5A drain current and 4.5V gate drive.
The FDZ203N is offered in a surface-mount 9-WFBGA package with a supplier device package of 9-BGA (2x2.1mm).
The maximum gate threshold voltage (Vgs(th)) is 1.5V at 250µA drain current.
The maximum power dissipation is 1.6W at ambient temperature.