| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,971 pcs
|
4971 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDZ197PZ is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It features a maximum drain-source voltage of 20V and a continuous drain current of 3.8A at ambient temperature. The device utilizes MOSFET technology with an on-resistance of 64 mOhm at Vgs=4.5V and Id=2A.
Designed for surface mount applications, this MOSFET is housed in a 6-UFBGA, WLCSP package with a supplier device package of 6-WLCSP (1.0x1.5). It offers a maximum power dissipation of 1.9W at ambient temperature. The gate threshold voltage is 1V maximum at Id=250µA, and the device can be driven with logic-level voltages.
With a maximum gate charge of 25 nC at Vgs=4.5V and input capacitance of 1570 pF at Vds=10V, this MOSFET is suitable for switching applications requiring fast switching and low conduction losses. The operating temperature range is -55°C to 150°C junction temperature.
| Qty | Low | High |
|---|---|---|
| 808+ | $0.37 | $0.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V
3.8A at ambient temperature
64 mOhm maximum at Vgs=4.5V and Id=2A
-55°C to 150°C (junction temperature)
6-UFBGA, WLCSP with supplier package 6-WLCSP (1.0x1.5)
RoHS3 Compliant (unverified)
1.9W at ambient temperature