| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDZ191P is a P-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for low-voltage power switching applications and is available in a compact 6-WLCSP (1.0 x 1.5 mm) surface-mount package. The device is rated for a maximum drain-to-source voltage of 20 V and a continuous drain current of 3 A at 25°C ambient temperature.
Key electrical characteristics include a maximum on-resistance of 85 mΩ at a gate drive of 4.5 V and a drain current of 1 A. The maximum gate threshold voltage is 1.5 V at a drain current of 250 µA, allowing the device to be driven by low-voltage logic. The input capacitance is 800 pF at Vds = 10 V, and the total gate charge is 13 nC at Vgs = 10 V. Maximum power dissipation is 1.9 W at 25°C ambient.
The FDZ191P operates over a junction temperature range of -55°C to +150°C, making it suitable for demanding environments. With its small footprint and low on-resistance, it is well suited for load switching, portable electronics, and other space-constrained power management circuits.
The maximum drain-to-source voltage is 20 V.
The maximum continuous drain current is 3 A at 25°C ambient temperature.
The FDZ191P is available in a 6-UFBGA/WLCSP package, with supplier device package 6-WLCSP measuring 1.0 mm x 1.5 mm.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance is 85 mΩ at Vgs = 4.5 V and Id = 1 A.
According to the existing database, the FDZ191P is RoHS3 compliant, although this status is unverified.
The maximum gate threshold voltage is 1.5 V at a drain current of 250 µA.