FDZ1905PZ

The FDZ1905PZ is a dual P-Channel MOSFET array in a common drain configuration, fabricated using ON Semiconductor's advanced POWERTRENCH process. It is designed for bidirectional current flow, making it suitable for battery charge switch applications in cellular handsets and other ultra-portable devices.

Key electrical specifications include a maximum drain-source voltage (VS1S2) of -20V and a continuous source-source current (IS1S2) of -3A at TA=25°C, with pulsed capability up to -15A. The device offers logic level gate drive with on-resistance (rS1S2(on)) ranging from 126mΩ at VGS=-4.5V to 303mΩ at VGS=-1.5V. Gate-source threshold voltage is typically -0.7V. The device also provides ESD protection of >4kV (HBM).

The FDZ1905PZ is housed in a compact 6-WLCSP package (1x1.5mm) with solder bump terminations, occupying only 1.5mm² of PCB area. It features an ultra-thin profile (<0.65mm when mounted) and excellent thermal characteristics, with junction-to-ambient thermal resistance of 83°C/W (Note 1a) and 140°C/W (Note 1b). Operating junction temperature range is -55°C to 150°C.

Typical applications include battery charge switching, power management, and load switching in portable electronics. The device is RoHS compliant and Pb-Free.