| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
87,000 pcs
|
87000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDY2000PZ is a dual P-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for small signal switching applications requiring low power dissipation. The device offers a maximum drain-source voltage of 20V and a continuous drain current of 350mA. The on-resistance is typically 1.2 Ohm at a gate-source voltage of 4.5V and drain current of 350mA, making it suitable for logic-level gate drive circuits. The gate charge is 1.4nC at 4.5V, and input capacitance is 100pF at 10V drain-source voltage. The threshold voltage is 1.5V at 250µA drain current. Maximum power dissipation is 446mW. The device is housed in a SOT-563 or SOT-666 surface-mount package, specifically the SOT-563F supplier package. It is designed for surface mount assembly and operates over a junction temperature range of -55°C to 150°C. The dual P-Channel configuration integrates two independent MOSFETs in a single package, saving board space and simplifying design. Typical applications include load switching, power management, and battery protection circuits. The device is RoHS3 compliant (unverified) and has MSL 1 unlimited moisture sensitivity level.
| Qty | Low | High |
|---|---|---|
| 6,000+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The FDY2000PZ is available in SOT-563 and SOT-666 packages, with the supplier device package being SOT-563F.
The operating junction temperature range is -55°C to 150°C.
The FDY2000PZ is marked as RoHS3 compliant, but this status is unverified.
It is a dual P-Channel MOSFET.
The maximum gate threshold voltage is 1.5V at 250µA drain current.
Surface mount.