| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDY102PZ is a P-Channel enhancement-mode MOSFET from On Semiconductor, designed for general-purpose switching applications. It features a drain-source voltage (Vdss) of 20V and a continuous drain current of 830mA at ambient temperature.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 500mOhm at 830mA and 4.5V gate drive, and a low gate threshold voltage of 1V at 250µA. The device offers fast switching with typical input capacitance of 135pF at 10V and gate charge of 3.1nC at 4.5V.
The MOSFET is housed in a compact SC-89 (SOT-490) surface-mount package, suitable for space-constrained designs. It operates over a junction temperature range of -55°C to 150°C, with maximum power dissipation of 625mW at ambient.
-55°C to 150°C (junction).
SC-89 (SOT-490).
RoHS3 Compliant (unverified).
20V.
830mA at ambient temperature.
1V maximum at 250µA.
500mOhm maximum at 830mA and 4.5V.