FDY100PZ

The FDY100PZ is a single P-Channel MOSFET from On Semiconductor, designed for low-voltage switching applications. It features a drain-source voltage (Vdss) of 20V and a continuous drain current of 350mA at 25°C ambient, with a pulsed drain current capability of up to 1A. The device utilizes PowerTrench technology to achieve low on-resistance, with typical Rds(on) of 0.5Ω at Vgs=-4.5V and 350mA, and a maximum of 1.2Ω at the same conditions. For lower gate drive voltages, on-resistance increases to 0.8Ω typical (1.6Ω max) at Vgs=-2.5V and 1.3Ω typical (2.7Ω max) at Vgs=-1.8V.

The MOSFET is housed in a compact SC-89 (SOT-490) surface mount package with a supplier device package of SOT-523F. It is supplied in tape and reel with 8mm tape width, 7-inch reel, and 3000 pieces per reel. The device is RoHS3 compliant and has a maximum power dissipation of 625mW at 25°C ambient, with a junction-to-ambient thermal resistance of 200°C/W (Note 1a).

Key electrical characteristics include a gate charge (Qg) of 1.4nC max at Vgs=4.5V and input capacitance (Ciss) of 100pF max at Vds=10V. The gate threshold voltage (Vgs(th)) ranges from -0.65V to -1.5V at Id=250µA. The operating junction temperature range is -55°C to +150°C, making it suitable for demanding environments. This device is ideal for applications such as Li-Ion battery pack protection circuits and load switching in portable electronics.