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FDY1002PZ FDY1002PZ is a dual P-Channel logic level MOSFET rated for 20V drain-source voltage and 830mA continuous drain current, packaged in SOT-563F.
Mfr Part #:

FDY1002PZ

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDY1002PZ is a dual P-Channel logic level MOSFET rated for 20V drain-source voltage and 830mA continuous drain current, packaged in SOT-563F.
Total Stock: 3,889 pcs

FDY1002PZ Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,539 pcs
3539 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
350 pcs
350 pcs On Request 1 On Request On Request On Request On Request On Request

FDY1002PZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

FDY1002PZ Description

Short technical summary and product information.

The FDY1002PZ is a dual P-Channel MOSFET from On Semiconductor featuring a maximum drain-source voltage of 20V and continuous drain current of 830mA. It offers a low on-resistance of 500mOhm at 4.5V gate drive, enabling efficient switching in low-voltage applications. The logic level gate threshold of 1V allows direct drive from low-voltage logic circuits. With a maximum gate charge of 3.1nC and input capacitance of 135pF, the device is optimized for high-speed switching. It is housed in a compact SOT-563F surface-mount package, suitable for space-constrained designs.

 

The device is rated for a maximum power dissipation of 446mW and operates over a junction temperature range of -55°C to 150°C, providing reliable performance across extreme environments. The dual P-Channel configuration is ideal for battery management, load switching, and signal routing in portable electronics. The MOSFET is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).

FDY1002PZ Quick Information

Product Type: MOSFET array
Canonical Name: FDY1002PZ – Dual P-Channel Logic Level Gate MOSFET, 20V Vdss, 830mA Id, 500mOhm Rds(on), SOT-563F
Subcategory: P-Channel Dual Array

FDY1002PZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDY1002PZ Features

  • Dual P-Channel MOSFET in SOT-563F package.
  • Rated for 20V drain-source voltage maximum.
  • Continuous drain current up to 830mA.
  • Logic level gate threshold of 1V.
  • Low on-resistance of 500mOhm at 4.5V gate drive.

FDY1002PZ Applications

  • Battery management in portable devices.
  • Load switching for low-voltage circuits.
  • Signal routing and analog switching.
  • Power management in compact electronics.

FDY1002PZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDY1002PZ?

The maximum drain-source voltage (Vdss) is 20V.

What is the continuous drain current rating of the FDY1002PZ?

The continuous drain current is 830mA.

What is the on-resistance of the FDY1002PZ?

The on-resistance (Rds(on)) is 500mOhm maximum at Id=830mA and Vgs=4.5V.

What is the package type of the FDY1002PZ?

The device is available in SOT-563 and SOT-666 packages, with the supplier device package being SOT-563F.

What is the operating temperature range of the FDY1002PZ?

The junction operating temperature range is -55°C to 150°C.

What is the gate threshold voltage of the FDY1002PZ?

The maximum gate threshold voltage (Vgs(th)) is 1V at Id=250µA.

Does the FDY1002PZ have RoHS compliance?

RoHS3 compliance is indicated but unverified. Confirm with the manufacturer.

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