| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,000 pcs
|
21000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDWS9408-F085 is an N-Channel Power MOSFET from On Semiconductor. It is designed for high-efficiency power switching applications. Key electrical specifications include a drain-source voltage (Vdss) of 40V, continuous drain current of 80A at case temperature, and a maximum on-resistance of 1.8mΩ at 10V gate drive. Typical on-resistance is 1.5mΩ. The gate threshold voltage is 4V maximum at 250µA drain current. Total gate charge is 92nC at 10V, and input capacitance is 5150pF at 20V drain-source voltage.
This MOSFET can dissipate up to 214W and operates over a junction temperature range of -55°C to 175°C. It is suitable for power management circuits, DC-DC converters, motor drives, and load switching. The device is housed in an 8-PowerTDFN surface mount package, also known as Power56, which offers a compact footprint for space-constrained designs.
Design engineers should consider the drive voltage of 10V for optimal on-resistance. The device is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).
40V.
8-PowerTDFN (Power56).
-55°C to 175°C (junction).
RoHS3 Compliant (unverified).
80A at case temperature.
1.8mΩ at 10V gate drive and 80A drain current.
4V maximum at 250µA drain current.