FDWS86068-F085 N-Channel Power MOSFET rated for 100V drain to source voltage and 80A continuous drain current with maximum on-resistance of 6.4mΩ at 10V gate drive.
Mfr Part #:

FDWS86068-F085

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET rated for 100V drain to source voltage and 80A continuous drain current with maximum on-resistance of 6.4mΩ at 10V gate drive.
✓ Total Stock: 8,500 pcs
$ Price Range: $1.67 - $5.00

FDWS86068-F085 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,500 pcs
8500 pcs On Request 1 On Request On Request On Request On Request On Request

FDWS86068-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDWS86068-F085 Description

Short technical summary and product information.

The FDWS86068-F085 is an N-Channel PowerTrench MOSFET manufactured by onsemi (formerly ON Semiconductor). Designed for automotive applications, this device is qualified to AEC Q101 and features a maximum drain to source voltage of 100 V and continuous drain current of 80 A at Tc = 25°C.

 

Key electrical characteristics include a typical on-resistance of 5.2 mΩ at Vgs = 10 V and Id = 80 A, with a maximum of 6.4 mΩ. It offers a gate threshold voltage range of 2 V to 4 V and a total gate charge of 31 nC typical at 10 V. The device has an input capacitance of 2220 pF maximum at Vds = 50 V and supports a single pulse avalanche energy of 45 mJ.

 

The FDWS86068-F085 is housed in an 8-PowerTDFN package with wettable flanks for automatic optical inspection. It is surface mount and supports an operating junction temperature range of -55°C to +150°C. Power dissipation is rated at 214 W maximum.

FDWS86068-F085 Quick Information

Product Type: MOSFET
Series: FDWS86068-F085
Canonical Name: On Semiconductor FDWS86068-F085 N-Channel Power MOSFET, 100V, 80A, DFNW8
Subcategory: N-Channel Power MOSFET

FDWS86068-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDWS86068-F085 Estimated Pricing

Qty Low High
1+ $5.00 $5.00
10+ $3.31 $3.31
50+ $2.58 $2.58
100+ $2.34 $2.34
500+ $2.04 $2.04
3,000+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDWS86068-F085 Features

  • 100V drain to source voltage rating.
  • 80A continuous drain current capability.
  • 6.4mΩ maximum on-resistance at 10V.
  • Qualified to AEC Q101 automotive standard.
  • Wettable flank package for automated inspection.

FDWS86068-F085 Applications

  • Used in automotive engine control modules.
  • Ideal for powertrain and solenoid drivers.
  • Suitable for motor drive applications.
  • Used in electronic steering systems.

FDWS86068-F085 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain to source voltage rating of the FDWS86068-F085?

The maximum drain to source voltage (Vdss) is 100 V.

What is the continuous drain current rating?

The maximum continuous drain current is 80 A at Tc = 25°C.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is this device RoHS compliant?

The datasheet states the devices are Pb-Free and RoHS Compliant. RoHS3 compliance is unverified.

What package does the FDWS86068-F085 come in?

It is packaged in an 8-PowerTDFN (DFNW8) case, also specified as 8-DFN (5.1x6.3), and is surface mount with wettable flanks.

Is this part qualified for automotive applications?

Yes, it is qualified to AEC Q101.

What is the maximum on-resistance?

The maximum drain to source on-resistance is 6.4 mΩ at Vgs = 10 V, Id = 80 A. Typical value is 5.2 mΩ.

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