| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
113 pcs
|
113 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDW262P is a P-Channel enhancement-mode MOSFET from On Semiconductor, originally developed by Fairchild Semiconductor using the advanced PowerTrench process. This process minimizes on-state resistance while maintaining low gate charge for efficient switching.
Key electrical specifications include a maximum drain-source voltage of 20V and continuous drain current of 4.5A at 25°C. On-resistance is rated at 47mΩ max at Vgs=4.5V, 65mΩ at Vgs=2.5V, and 100mΩ at Vgs=1.8V, making it suitable for low-voltage logic-level gate drive. The gate threshold voltage ranges from 0.4V to 1.5V. Typical gate charge is 13nC, and switching times are fast, with turn-on delay of 11ns and fall time of 19ns.
The device is designed for power management and load switch applications in portable electronics, battery-powered devices, and low-voltage rail switching. It is packaged in a surface-mount 8-TSSOP (0.173", 4.40mm width) package. The component is rated for operation from -55°C to 150°C junction temperature and has a maximum power dissipation of 1.3W at 25°C ambient. It is supplied in tape and reel packaging with 2500 units per reel. Compliance includes RoHS3 (unverified), MSL 1, and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 356+ | $0.84 | $0.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The maximum continuous drain current is 4.5A at 25°C ambient.
The maximum on-resistance is 47mOhm at Vgs=4.5V and Id=4.5A.
The gate threshold voltage ranges from 0.4V minimum to 1.5V maximum, typical 0.8V at Id=250µA.
The junction temperature range is -55°C to 150°C.
Surface-mount 8-TSSOP package (0.173", 4.40mm width).
The component is listed as RoHS3 compliant, though this information is unverified.