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FDW258P The FDW258P is a P-Channel PowerTrench MOSFET from On Semiconductor with 12V drain-source voltage and 9A continuous drain current. It features low on-resistance of 11mΩ at 4.5V gate drive.
Mfr Part #:

FDW258P

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDW258P is a P-Channel PowerTrench MOSFET from On Semiconductor with 12V drain-source voltage and 9A continuous drain current. It features low on-resistance of 11mΩ at 4.5V gate drive.
✓ Total Stock: 2,021 pcs
$ Price Range: $1.68

FDW258P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Speed Components Ltd ✓
Non-Authorised Inventory information
2,021 pcs
On Request
2021 pcs On Request 1 On Request On Request 08+30 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDW258P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDW258P Description

Short technical summary and product information.

The FDW258P is a P-Channel MOSFET built on Fairchild Semiconductor's advanced PowerTrench process, now manufactured by On Semiconductor. It is optimized for power management applications requiring gate drive voltages from 1.8V to 8V.

 

The device delivers a drain-source voltage rating of -12V and continuous drain current of -9A (Ta). On-resistance is specified at 11mΩ maximum with VGS = -4.5V and ID = -9A, 14mΩ at VGS = -2.5V, and 20mΩ at VGS = -1.8V. The MOSFET offers low gate charge (73nC max) and fast switching performance with typical turn-on delay of 17ns and turn-off delay of 201ns.

 

Housed in a surface-mount 8-TSSOP package (4.40mm body width), the FDW258P operates over a junction temperature range of -55°C to +150°C. Typical applications include load switching, motor drive circuits, DC/DC conversion, and general power management.

FDW258P Quick Information

Product Type: MOSFET (P-Channel)
Canonical Name: FDW258P P-Channel PowerTrench MOSFET
Subcategory: Single P-Channel

FDW258P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDW258P Estimated Pricing

Qty Low High
179+ $1.68 $1.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDW258P Features

  • P-Channel PowerTrench MOSFET with 12V Vdss.
  • Continuous drain current rating of 9A.
  • Low on-resistance: 11mΩ at 4.5V gate drive.
  • Operates with gate drive from 1.8V to 8V.
  • Surface mount 8-TSSOP package.

FDW258P Applications

  • Ideal for load switch applications.
  • Used in DC/DC converter designs.
  • Suitable for motor drive circuits.
  • Applied in power management systems.

FDW258P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of FDW258P?

The drain-source voltage rating is -12V.

What is the continuous drain current of FDW258P?

Continuous drain current (Ta) is -9A.

What is the on-resistance at 4.5V gate drive?

Maximum on-resistance is 11mΩ at VGS = -4.5V and ID = -9A.

What package does FDW258P come in?

It comes in a surface-mount 8-TSSOP package (0.173", 4.40mm width).

What is the operating temperature range?

The junction operating temperature range is -55°C to +150°C.

Is FDW258P RoHS compliant?

The part is listed as RoHS3 Compliant (unverified from existing database).

What is the gate threshold voltage of FDW258P?

Gate threshold voltage (max) is 1.5V at ID = 250µA; typical is -0.6V; minimum is -0.4V.

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