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FDW2521C FDW2521C is a complementary N and P-Channel PowerTrench MOSFET designed for DC/DC conversion and power management. It features 20V drain-source voltage, 5.5A N-Channel and -3.8A P-Channel continuous current, with low on-resistance.
Mfr Part #:

FDW2521C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDW2521C is a complementary N and P-Channel PowerTrench MOSFET designed for DC/DC conversion and power management. It features 20V drain-source voltage, 5.5A N-Channel and -3.8A P-Channel continuous current, with low on-resistance.
✓ Total Stock: 90,400 pcs

FDW2521C Available from 1 distributor

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✓ Non-Authorised
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Romaks Technologies ✓
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90,400 pcs
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90400 pcs On Request 1 On Request On Request On Request On Request On Request
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FDW2521C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs(th) (Max) @ Id
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FDW2521C Description

Short technical summary and product information.

The FDW2521C is a complementary N and P-Channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process. This device integrates both an N-Channel and a P-Channel MOSFET in a single 8-TSSOP surface mount package, minimizing board space for applications requiring both polarities. Key specifications include a maximum drain-source voltage of 20V for both channels. The N-Channel (Q1) is rated for 5.5A continuous drain current with a typical on-resistance of 21 mΩ at VGS=4.5V, while the P-Channel (Q2) is rated for -3.8A with a typical on-resistance of 43 mΩ at VGS=-4.5V. Both channels feature logic level gate drive with gate threshold voltages of 0.6-1.5V (N) and -0.6 to -1.5V (P). The device has low gate charge of 17 nC and input capacitance of 1082 pF (N) and 1030 pF (P), enabling efficient switching. The operating junction temperature range is -55°C to 150°C. The FDW2521C is supplied in tape and reel packaging with 2500 units per reel, suitable for automated assembly. Typical applications include DC/DC converters, power management, and load switching.

FDW2521C Quick Information

Product Type: Complementary MOSFET Array
Canonical Name: FDW2521C Complementary PowerTrench MOSFET
Subcategory: Complementary Array

FDW2521C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDW2521C Features

  • Complementary N and P-Channel MOSFETs in one package.
  • Low on-resistance: 21 mΩ N-Channel at 4.5V.
  • Logic level gate drive compatible.
  • Surface mount 8-TSSOP package.
  • Rated for 20V drain-source voltage.

FDW2521C Applications

  • Ideal for DC/DC conversion circuits.
  • Used in power management applications.
  • Suitable for load switching.
  • Space-saving complementary pair design.

FDW2521C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for this MOSFET?

20 V for both N and P-Channel.

What is the package type for FDW2521C?

8-TSSOP (0.173", 4.40mm Width).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FDW2521C RoHS compliant?

According to existing data, it is marked as RoHS3 Compliant, but this is unverified.

What is the on-resistance of the N-Channel MOSFET?

21 mΩ typical at VGS=4.5V, ID=5.5A.

What is the continuous drain current rating?

5.5 A for N-Channel (Q1) and -3.8 A for P-Channel (Q2) at TA=25°C.

Does this device have logic level gate drive?

Yes, the gate threshold voltage is 0.6-1.5V for N-Channel and -0.6 to -1.5V for P-Channel.

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