| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | 12/ | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs(th) (Max) @ Id |
The FDW2520C is a complementary N-channel and P-channel PowerTrench MOSFET from On Semiconductor (formerly Fairchild Semiconductor), designed for efficient power management in space-constrained applications. The N-channel MOSFET (Q1) is rated for 20V drain-source voltage and 6A continuous drain current, with a typical on-resistance of 14mΩ (18mΩ maximum) at VGS=4.5V. The P-channel MOSFET (Q2) is rated for -20V drain-source voltage and -4.4A continuous drain current, with a typical on-resistance of 28mΩ (35mΩ maximum) at VGS=-4.5V.
Both devices feature low gate charge (20nC typical for Q1) and fast switching speeds, with typical turn-on delay times of 6ns (N-ch) and 12ns (P-ch). The MOSFETs are built using Fairchild's advanced PowerTrench process, which minimizes on-state resistance while maintaining low gate charge for superior switching performance. Typical applications include DC/DC conversion, power management, and load switching.
The device is housed in a low-profile 8-TSSOP package (4.40mm width) with gull-wing leads and 0.65mm lead spacing, suitable for surface-mount assembly. It is rated for operation over a junction temperature range of -55°C to 150°C, with a power dissipation of 1.0W (Note 1a) and thermal resistance of 125°C/W junction-to-ambient. The FDW2520C is supplied in tape and reel packaging with 2500 units per reel.
The N-channel MOSFET (Q1) is rated for 20V, and the P-channel MOSFET (Q2) is rated for -20V.
The N-channel MOSFET (Q1) can handle 6A continuous, and the P-channel MOSFET (Q2) can handle -4.4A continuous.
The FDW2520C is available in an 8-TSSOP (0.173", 4.40mm Width) surface-mount package.
The FDW2520C has an operating junction temperature range of -55°C to 150°C.
The N-channel on-resistance is 14mΩ typical (18mΩ maximum) at VGS=4.5V and ID=6A, and 19mΩ typical (28mΩ maximum) at VGS=2.5V and ID=5A.
The P-channel on-resistance is 28mΩ typical (35mΩ maximum) at VGS=-4.5V and ID=-4.4A, and 43mΩ typical (57mΩ maximum) at VGS=-2.5V and ID=-3.3A.
The FDW2520C is marked as RoHS3 compliant, but this information is unverified and should be confirmed from the official datasheet or certificate.