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FDW2509NZ FDW2509NZ is a dual N-channel, common drain MOSFET from On Semiconductor. It features a maximum drain-source voltage of 20V and continuous drain current of 7.1A.
Mfr Part #:

FDW2509NZ

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDW2509NZ is a dual N-channel, common drain MOSFET from On Semiconductor. It features a maximum drain-source voltage of 20V and continuous drain current of 7.1A.
✓ Total Stock: 200,000 pcs
$ Price Range: $0.68

FDW2509NZ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
200,000 pcs
On Request
200000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDW2509NZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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FDW2509NZ Description

Short technical summary and product information.

The FDW2509NZ is a dual N-channel MOSFET in a common drain configuration, designed and manufactured by On Semiconductor. This MOSFET is built using Metal Oxide (MOSFET) technology and is intended for surface mount assembly in compact electronic designs.

 

Key electrical specifications include a maximum drain-source voltage of 20V and a continuous drain current rating of 7.1A at ambient temperature. The device features a low drain-source on-state resistance of 20mOhm maximum at 7.1A drain current and 4.5V gate drive. Gate threshold voltage is 1.5V maximum at 250µA drain current. Input capacitance is 1263pF at 10V drain-source voltage, and total gate charge is 19nC at 4.5V.

 

The FDW2509NZ is offered in an 8-TSSOP package (0.173", 4.40mm width) with supplier device package designator also 8-TSSOP. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.1W at ambient temperature.

FDW2509NZ Quick Information

Product Type: MOSFET Array
Canonical Name: FDW2509NZ Dual N-Channel MOSFET
Subcategory: Small Signal N-Channel MOSFET Array

FDW2509NZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant

FDW2509NZ Estimated Pricing

Qty Low High
443+ $0.68 $0.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDW2509NZ Features

  • Dual N-channel common drain MOSFET.
  • 20V maximum drain-source voltage rating.
  • 7.1A continuous drain current at Ta.
  • 20mOhm on-resistance at 7.1A, 4.5V.
  • Surface mount 8-TSSOP package.

FDW2509NZ Applications

  • Used in dual MOSFET array circuits.
  • Suitable for low voltage power switching.
  • Ideal for compact surface mount designs.

FDW2509NZ FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDW2509NZ?

The maximum drain-source voltage is 20V.

What is the maximum continuous drain current of the FDW2509NZ?

The maximum continuous drain current is 7.1A at ambient temperature.

What package does the FDW2509NZ come in?

The FDW2509NZ is offered in an 8-TSSOP (0.173", 4.40mm Width) surface mount package.

What is the operating temperature range of the FDW2509NZ?

The operating junction temperature range is -55°C to 150°C.

Is the FDW2509NZ RoHS compliant?

The FDW2509NZ is listed as RoHS3 Compliant, though this is unverified.

What is the on-resistance of the FDW2509NZ?

The maximum drain-source on-resistance is 20mOhm at 7.1A drain current and 4.5V gate-source voltage.

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