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FDW2508PB The FDW2508PB is a dual P-Channel MOSFET from On Semiconductor, rated for -12V drain-source voltage and -6A continuous drain current. It features low on-resistance down to 18mΩ at 4.5V and is housed in an 8-TSSOP package.
Mfr Part #:

FDW2508PB

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDW2508PB is a dual P-Channel MOSFET from On Semiconductor, rated for -12V drain-source voltage and -6A continuous drain current. It features low on-resistance down to 18mΩ at 4.5V and is housed in an 8-TSSOP package.
✓ Total Stock: 2,295 pcs

FDW2508PB Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Speed Components Ltd ✓
Non-Authorised Inventory information
2,295 pcs
On Request
2295 pcs On Request 1 On Request On Request 1004 On Request On Request
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FDW2508PB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package / Case
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape Width
Technology
Vgs(th) (Max) @ Id
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FDW2508PB Description

Short technical summary and product information.

The FDW2508PB is a dual P-Channel logic-level MOSFET designed for low-voltage power management applications. It features a drain-source voltage rating of -12V (minimum breakdown) and a continuous drain current of -6A at 25°C, with pulsed capability up to -30A. The device offers low on-resistance: 18mΩ maximum at Vgs=-4.5V, 22mΩ at Vgs=-2.5V, and 30mΩ at Vgs=-1.8V, enabling efficient operation in battery-powered circuits. Gate charge is 45nC maximum, and input capacitance is 3775pF maximum, supporting moderate-speed switching. The MOSFET is housed in a surface-mount 8-TSSOP package (0.173", 4.40mm width) and is RoHS3 compliant. Operating junction temperature range is -55°C to +150°C. Typical applications include power management, load switching, and battery protection in portable electronics.

FDW2508PB Quick Information

Product Type: Dual P-Channel MOSFET
Series: PowerTrench
Canonical Name: FDW2508PB Dual P-Channel MOSFET
Subcategory: MOSFET Arrays

FDW2508PB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDW2508PB Features

  • Dual P-Channel MOSFET in 8-TSSOP package.
  • Rated for -12V drain-source voltage.
  • Continuous drain current of -6A.
  • Low on-resistance down to 18mΩ.
  • Logic level gate drive compatible.

FDW2508PB Applications

  • Power management in portable devices.
  • Load switch for battery circuits.
  • Battery protection applications.
  • Ideal for low-voltage switching.

FDW2508PB FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

-12V (minimum breakdown voltage).

What package is the FDW2508PB available in?

8-TSSOP (0.173", 4.40mm Width) surface mount package.

What is the operating temperature range?

-55°C to +150°C (junction).

Is the FDW2508PB RoHS compliant?

Yes, RoHS3 compliant per datasheet.

What is the maximum drain current?

-6A continuous, -30A pulsed.

What is the on-resistance at 4.5V?

18mΩ maximum, 15mΩ typical.

What is the gate threshold voltage?

Minimum -0.4V, typical -0.6V, maximum -1.5V.

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