| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,295 pcs
|
2295 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Current, Pulsed | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage (ID=-250µA, VGS=0V) | |
| FET Feature | |
| Forward Transconductance (VDS=-5V, ID=-6A) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Source Voltage (Vgs) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Power | |
| Power Dissipation (Maximum @ Dual operation) | |
| Power Dissipation (Maximum @ Single operation (Note 1 A) | |
| Rds On (Max) @ Id, Vgs | |
| Reel Size | |
| Standard Package Qty | |
| Supplier Device Package | |
| Tape Width | |
| Technology | |
| Thermal Resistance, Junction-to-Ambient (Maximum @ Note 1 A) | |
| Thermal Resistance, Junction-to-Ambient (Maximum @ Note 1 b) | |
| Vgs(th) (Max) @ Id | |
| drain_source_on_resistance (Typical/Maximum @ VGS=2.5 V, ID=5 A) | |
| drain_source_on_resistance (Typical/Maximum @ Vgs=-1.8 V, Id=-4 A) | |
| fall_time (Vdd=-6V, Id=-6A, Vgs=-4.5V, Rgen=6Ω) | |
| gate_charge_drain_miller (Vgs=-4.5V, Vdd=-6V, Id=-6A) | |
| gate_charge_source (Vgs=-4.5V, Vdd=-6V, Id=-6A) | |
| gate_threshold_voltage_vgs_th (Minimum/Typical/Maximum @ Id=-250 µA) | |
| output_capacitance_coss (Vds=-6V, Vgs=0V, f=1MHz) | |
| reverse_transfer_capacitance_crss (Vds=-6V, Vgs=0V, f=1MHz) | |
| rise_time (Vdd=-6V, Id=-6A, Vgs=-4.5V, Rgen=6Ω) | |
| turn_off_delay_time (Vdd=-6V, Id=-6A, Vgs=-4.5V, Rgen=6Ω) | |
| turn_on_delay_time (Vdd=-6V, Id=-6A, Vgs=-4.5V, Rgen=6Ω) |
The FDW2508PB is a dual P-Channel logic-level MOSFET designed for low-voltage power management applications. It features a drain-source voltage rating of -12V (minimum breakdown) and a continuous drain current of -6A at 25°C, with pulsed capability up to -30A. The device offers low on-resistance: 18mΩ maximum at Vgs=-4.5V, 22mΩ at Vgs=-2.5V, and 30mΩ at Vgs=-1.8V, enabling efficient operation in battery-powered circuits. Gate charge is 45nC maximum, and input capacitance is 3775pF maximum, supporting moderate-speed switching. The MOSFET is housed in a surface-mount 8-TSSOP package (0.173", 4.40mm width) and is RoHS3 compliant. Operating junction temperature range is -55°C to +150°C. Typical applications include power management, load switching, and battery protection in portable electronics.
-12V (minimum breakdown voltage).
8-TSSOP (0.173", 4.40mm Width) surface mount package.
-55°C to +150°C (junction).
Yes, RoHS3 compliant per datasheet.
-6A continuous, -30A pulsed.
18mΩ maximum, 15mΩ typical.
Minimum -0.4V, typical -0.6V, maximum -1.5V.