| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request | |
|
2,166 pcs
|
2166 pcs | On Request | 1 | On Request | On Request | 338 | On Request | On Request | |
|
879 pcs
|
879 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
325 pcs
|
325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Current, Pulsed | |
| Drain Source On Resistance (Typical @ VGS = -1.8 V, ID = -4 A) | |
| Drain Source On Resistance (Typical @ VGS = -2.5 V, ID = -5 A) | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Diode Forward Voltage (VSD) | |
| FET Feature | |
| Forward Transconductance (gfs) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Drain Charge (Qgd) | |
| Gate-Source Charge (Qgs) | |
| Gate-Source Voltage (Vgss) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction to Ambient Thermal Resistance (RθJA) | |
| Maximum Continuous Drain-Source Diode Forward Current (IS) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Coss) | |
| Power | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| Reel Quantity | |
| Reel Size | |
| Reverse Transfer Capacitance (Crss) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape Width | |
| Technology | |
| Turn-Off Delay Time (td(off)) | |
| Turn-Off Fall Time (tf) | |
| Turn-On Delay Time (td(on)) | |
| Turn-On Rise Time (tr) | |
| Vgs(th) (Max) @ Id |
The FDW2508P is a dual P-Channel MOSFET designed for battery power management applications. It utilizes Fairchild's advanced low voltage PowerTrench process to achieve low on-resistance and low gate charge. Key specifications include a maximum drain-source voltage of -12V, continuous drain current of -6A, and pulsed drain current of -30A. The device offers typical Rds(on) of 18mOhm at VGS=-4.5V, 22mOhm at VGS=-2.5V, and 30mOhm at VGS=-1.8V, making it suitable for logic-level gate drive. The gate threshold voltage ranges from -0.4V to -1.5V. The MOSFET is housed in a low-profile 8-TSSOP package with surface mount mounting. It is RoHS3 compliant and has an MSL rating of 1 (unlimited). The operating junction temperature range is -55°C to 150°C. Typical applications include power management, load switching, and battery protection circuits.
| Qty | Low | High |
|---|---|---|
| 356+ | $0.84 | $0.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is -12V, and the gate-source voltage range is ±8V.
8-TSSOP (0.173", 4.40mm Width) surface mount package.
-55°C to 150°C (junction temperature).
Yes, it is marked as RoHS3 compliant (unverified).
18mOhm at VGS=-4.5V, 22mOhm at VGS=-2.5V, and 30mOhm at VGS=-1.8V.
Ranges from -0.4V to -1.5V with typical -0.5V.