| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
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| SVHC Present |
The Fairchild FDW2506P is a P-Channel MOSFET housed in a TSSOP-8 SMD package. This component offers a drain-source voltage (Vds) of 20V and a typical on-resistance (Rds(on)) of 22 MOhm when driven by a -4.5V gate-source voltage (Vgs).
Key electrical specifications include a continuous drain current (Id) of 5.3A and a pulse current (Idm) of 30A. The typical threshold voltage (Vgs(th)) is 800mV, and the input capacitance (Ciss) is 1015 pF. With a power dissipation (Pd) rating of 1W, this MOSFET is suitable for applications requiring efficient power switching.
The FDW2506P is designed for surface-mount (SMD) applications, utilizing the TSSOP package for compact integration onto printed circuit boards. Its P-channel polarity and trench technology make it a versatile choice for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 20 V.
The maximum continuous drain current (Id) is 5.3 A.
The maximum on-resistance (Rds(on)) is 22 MOhm at Vgs = -4.5 V.
The FDW2506P is supplied in a TSSOP-8 SMD package.
The typical threshold voltage (Vgs(th)) is 800 mV.
The maximum power dissipation (Pd) is 1 W.