| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,203 pcs
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2203 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request |
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The FDW2502P is a Dual P-Channel MOSFET utilizing Fairchild Semiconductor's advanced PowerTrench process, optimized for power management applications. This device is specified for a 2.5V gate drive voltage and operates across a wide range from 2.5V to 12V.
Key electrical characteristics include a maximum drain-source voltage of 20V and a continuous drain current of 4.4A. The on-resistance (RDS(ON)) is typically 36mΩ at a gate-source voltage of 10V and 55mΩ at 4.5V. It also exhibits a typical RDS(ON) of 35mΩ at VGS = -10V.
This MOSFET is designed for rugged gate performance and is suitable for various power management tasks. Its P-Channel configuration and specific voltage and current ratings make it a versatile component for circuit designs requiring efficient power control.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the FDW2502P is 20V.
The FDW2502P has a continuous drain current of 4.4A.
The typical on-resistance (RDS(ON)) of the FDW2502P at VGS = 10V is 36mΩ.
The typical on-resistance (RDS(ON)) of the FDW2502P at VGS = 4.5V is 55mΩ.
The FDW2502P is optimized for a wide range of gate drive voltage from 2.5V to 12V.
The FDW2502P has a P-Channel type.