BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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2,203 pcs
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2203 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request |
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The FDW2502P is a Dual P-Channel MOSFET manufactured by Fairchild Semiconductor, utilizing their advanced PowerTrench process. This device is optimized for power management applications and supports a wide gate drive voltage range from 2.5V to 12V.
Key electrical characteristics include a maximum drain-source voltage of 30V and a continuous drain current of 5.2A. The on-resistance (RDS(ON)) is specified at 35mΩ typical at VGS = 10V and 55mΩ typical at VGS = 4.5V. These specifications make it suitable for various power switching and control tasks.
This MOSFET is designed for surface mount applications. Its rugged gate construction ensures reliability in demanding power management scenarios.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The continuous drain current is 5.2A.
The typical on-resistance is 35 mOhms at VGS = 10V.
The typical on-resistance is 55 mOhms at VGS = 4.5V.
The gate drive voltage range is 2.5V to 12V.