| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
532 pcs
|
532 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDW2501NZ is a dual N-Channel MOSFET array from On Semiconductor, utilizing advanced PowerTrench technology. It is designed for power management applications requiring low on-resistance and high efficiency.
Key specifications include a maximum drain-source voltage of 20V, continuous drain current of 5.5A (at 25°C), and a typical on-resistance of 18mOhm at 4.5V gate drive. The logic-level gate threshold voltage (0.6V to 1.5V) allows direct drive from low-voltage logic circuits.
The device is offered in an 8-lead TSSOP surface-mount package with a low profile, suitable for compact designs. It supports a wide operating temperature range from -55°C to +150°C. The gate-source voltage is rated up to ±12V, making it robust for battery-powered applications.