| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,700 pcs
|
1700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDV304P-F169 is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for low-power switching applications. Key electrical characteristics include a drain-source voltage (Vdss) of 25V, continuous drain current of 460mA at 25°C, and a maximum Rds(on) of 1.1 Ohm at 500mA gate drive of 4.5V. The device features a low threshold voltage of 1.5V maximum at 250µA, making it suitable for logic-level gate drive. The gate charge is 1.5 nC and input capacitance is 63 pF, enabling fast switching. The MOSFET is housed in a compact SOT-23-3 surface-mount package, also available as TO-236-3 and SC-59. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 350mW. This device is RoHS3 compliant and has an MSL rating of 1 (unlimited). It is ideal for load switching, battery protection, and power management in portable electronics.
| Qty | Low | High |
|---|---|---|
| 1,700+ | $0.37 | $0.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25V.
460mA at 25°C.
SOT-23-3 (also TO-236-3, SC-59).
-55°C to 150°C.
It is listed as RoHS3 Compliant, but this status is unverified.
1.1 Ohm at 500mA and 4.5V.
1.5V maximum at 250µA.