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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDV304P is a P-Channel enhancement mode field-effect transistor produced using onsemi's proprietary high cell density DMOS technology. This device is designed for battery-powered applications such as notebook computers and cellular phones.
Key electrical characteristics include a maximum drain-source voltage of -25V, continuous drain current of -0.46A, and pulsed drain current of -1.5A. On-resistance is 1.1 Ohm maximum at Vgs=-4.5V and Id=500mA, and 1.5 Ohm maximum at Vgs=-2.7V and Id=500mA. Gate threshold voltage is 1.5V maximum at Id=250µA. The device features a gate-source Zener diode for ESD ruggedness, rated at 6kV Human Body Model.
The MOSFET is housed in a compact SOT-23-3 surface-mount package (TO-236-3, SC-59, SOT-23-3). It operates over a junction temperature range of -55°C to 150°C with maximum power dissipation of 350mW at 25°C ambient. The part is Pb-free and Halide-free as verified by the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.52 | $0.52 |
| 10+ | $0.32 | $0.32 |
| 50+ | $0.23 | $0.23 |
| 100+ | $0.20 | $0.20 |
| 500+ | $0.15 | $0.15 |
| 3,000+ | $0.11 | $0.11 |
| 6,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -25V.
The maximum continuous drain current is 460 mA at Ta=25°C.
The maximum Rds(on) is 1.1 Ohm at Id=500mA, Vgs=-4.5V.
It is available in a TO-236-3, SC-59, SOT-23-3 surface-mount package.
The operating junction temperature range is -55°C to 150°C.
RoHS3 compliance is listed but unverified. The datasheet confirms the device is Pb-Free and Halide Free.