FDV303N FDV303N is an N-Channel enhancement mode MOSFET from On Semiconductor. It features a 25V drain-source voltage rating and 680mA continuous drain current.
Mfr Part #:

FDV303N

Available from 17 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDV303N is an N-Channel enhancement mode MOSFET from On Semiconductor. It features a 25V drain-source voltage rating and 680mA continuous drain current.
✓ Total Stock: 1,304,630 pcs
$ Price Range: $0.06 - $0.32

FDV303N Available from 17 distributors

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1,102,020 pcs
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2,948 pcs
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110 pcs
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FDV303N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDV303N Description

Short technical summary and product information.

The FDV303N is an N-Channel enhancement mode field effect transistor produced using onsemi's proprietary, high cell density, DMOS technology. This device is designed for applications requiring low on-state resistance at low gate drive voltages, making it suitable for battery-powered circuits.

 

Key electrical specifications include a maximum drain-source voltage of 25V, continuous drain current of 680mA at 25°C ambient, and a pulsed drain current rating of 2A. The on-resistance is 450mOhm maximum at 4.5V gate drive and 600mOhm maximum at 2.7V gate drive. The device features a gate threshold voltage of 1.5V maximum and includes a gate-source Zener diode for ESD protection rated at 6kV HBM.

 

The FDV303N is offered in the compact industry standard SOT-23 surface mount package (SOT-23-3). It is supplied in tape and reel packaging with a standard quantity of 3000 pieces per reel. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

FDV303N Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FDV303N N-Channel Digital MOSFET
Subcategory: Single N-Channel

FDV303N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDV303N Estimated Pricing

Qty Low High
1+ $0.32 $0.32
10+ $0.20 $0.20
50+ $0.14 $0.14
100+ $0.12 $0.12
500+ $0.09 $0.09
3,000+ $0.06 $0.06
6,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDV303N Features

  • 25V drain-source voltage rating.
  • 680mA continuous drain current.
  • 450mOhm on-resistance at 4.5V.
  • 6kV HBM ESD protection rating.
  • SOT-23 surface mount package.

FDV303N Applications

  • Battery management in portable electronics.
  • Low-voltage DC-DC converter circuits.
  • Load switching in 3V systems.
  • Inverter circuits for compact devices.

FDV303N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDV303N?

The maximum drain-source voltage (VDSS) is 25V.

What is the continuous drain current rating?

The continuous drain current is 680mA at 25°C ambient temperature.

What is the on-resistance of the FDV303N?

The maximum on-resistance is 450mOhm at VGS=4.5V and ID=500mA, and 600mOhm at VGS=2.7V and ID=500mA.

What package is the FDV303N available in?

The FDV303N is available in a SOT-23 (TO-236) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDV303N RoHS compliant?

Yes, the FDV303N is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 1.5V at ID=250µA.

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