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FDV302P_D87Z P-Channel MOSFET with 25V drain-source voltage and 120mA continuous drain current. Surface mount package SOT-23-3.
Mfr Part #:

FDV302P_D87Z

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET with 25V drain-source voltage and 120mA continuous drain current. Surface mount package SOT-23-3.
✓ Total Stock: 143,467 pcs
$ Price Range: $0.15 - $0.17

FDV302P_D87Z Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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Flip Electronics ✓
Non-Authorised Inventory information
143,467 pcs
On Request
143467 pcs On Request 1 On Request On Request On Request On Request On Request
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FDV302P_D87Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDV302P_D87Z Description

Short technical summary and product information.

The FDV302P_D87Z is a P-Channel logic level enhancement mode MOSFET produced using Fairchild Semiconductor's proprietary DMOS technology. It is designed for low voltage applications and can replace multiple PNP digital transistors (DTCx and DCDx series) without requiring bias resistors.

 

Key electrical specifications include a maximum drain-source voltage of -25V, continuous drain current of -120mA (at 25°C), and pulsed drain current up to -0.5A. The device features a low on-resistance of 10Ω typical at VGS = -4.5V and ID = -0.2A, and 13Ω maximum at VGS = -2.7V. Gate threshold voltage ranges from -0.65V to -1.5V, enabling direct operation from 3V logic circuits.

 

The MOSFET is housed in a compact SOT-23-3 surface mount package (also known as TO-236-3 or SC-59). It offers an ESD rating of 6.0 kV (Human Body Model) and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 350mW at 25°C ambient.

FDV302P_D87Z Quick Information

Product Type: P-Channel MOSFET
Canonical Name: FDV302P_D87Z P-Channel MOSFET, 25V, 120mA, SOT-23-3
Subcategory: P-Channel MOSFET

FDV302P_D87Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDV302P_D87Z Estimated Pricing

Qty Low High
10,000+ $0.17 $0.17
20,000+ $0.16 $0.16
30,000+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDV302P_D87Z Features

  • P-Channel logic level enhancement mode MOSFET.
  • 25V drain-source voltage rating.
  • 120mA continuous drain current.
  • Low on-resistance of 10Ω at 4.5V.
  • ESD rating of 6kV human body model.

FDV302P_D87Z Applications

  • Ideal for low voltage load switching.
  • Replaces PNP digital transistors in circuits.
  • Suitable for battery powered portable devices.
  • Used in 3V logic level applications.

FDV302P_D87Z FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

25V.

What is the package type?

Surface mount SOT-23-3 (TO-236-3, SC-59).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FDV302P_D87Z RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate threshold voltage?

Minimum -0.65V, typical -1V, maximum -1.5V at ID = -250 µA.

What is the ESD rating?

6.0 kV (Human Body Model).

What is the on-resistance at 4.5V gate drive?

Typical 7.9Ω, maximum 10Ω at VGS = -4.5V and ID = -0.2A.

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