| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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57,096 pcs
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57096 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDV301N-F169 is an N-Channel logic-level enhancement mode field effect transistor from onsemi, produced using their high cell density DMOS technology. This device is designed for low voltage applications as a replacement for digital transistors, eliminating the need for bias resistors.
Key electrical specifications include a drain to source voltage of 25V, continuous drain current of 220mA at 25°C, and a peak pulse drain current of 500mA. The gate threshold voltage is a maximum of 1.06V, allowing direct operation from 3V logic circuits. On-resistance is specified as 5 ohms maximum at Vgs=2.7V and 4 ohms maximum at Vgs=4.5V, with a typical value of 4 ohms at Vgs=2.7V.
The device features very low input capacitance of 9.5pF and a gate charge of just 0.7nC, enabling fast switching. It is supplied in a compact SOT-23-3 surface mount package, rated for power dissipation up to 350mW. The FDV301N-F169 is Pb-free and Halide-free, and is available in tape and reel packaging for automated assembly. It is suitable for inverter and general-purpose low-voltage switching applications.
| Qty | Low | High |
|---|---|---|
| 18,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 25V.
The continuous drain current at Ta=25°C is 220mA (0.22A), with a peak pulse current of 500mA.
The operating junction temperature range is -55°C to 150°C.
The device is offered in a SOT-23-3 surface mount package (also described as TO-236-3, SC-59, SOT-23-3).
The maximum gate threshold voltage (Vgs(th)) is 1.06V at Id=250µA, allowing direct drive from 3V logic.
The device is marked as RoHS3 Compliant (unverified), Pb-Free and Halide-Free (verified from the datasheet).
Maximum Rds(on) is 5Ω at Vgs=2.7V (Id=200mA) and 4Ω at Vgs=4.5V (Id=400mA).