| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,518 pcs
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4518 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The FDV301N is an N-Channel logic level enhancement mode field effect transistor manufactured by Fairchild Semiconductor using a high cell density DMOS technology. This technology is optimized to minimize on-state resistance.
Key electrical specifications include a breakdown voltage of 25V and a continuous current rating of 220mA. The maximum on-state resistance (RDS(on)) is 4Ω, with a typical drain-source resistance of 5Ω. Input capacitance is rated at 9.5pF, and the rise time is a maximum of 6ns.
This MOSFET has a maximum power dissipation of 350mW. It operates within a temperature range of -55°C to 150°C. The device is housed in a surface-mount SOT-23 package with 3 terminals.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 25V.
The FDV301N is available in a SOT-23 surface-mount package.
The operating temperature range is -55°C to 150°C.
The maximum continuous drain current is 220mA.
The maximum power dissipation is 350mW.
The maximum on-resistance is 4Ω.
The input capacitance is 9.5pF.