| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDV301N is an N-Channel logic level enhancement mode field effect transistor produced using onsemi's proprietary DMOS technology. This device is designed for low voltage applications as a replacement for digital transistors, eliminating the need for bias resistors.
Key electrical specifications include a drain-source voltage rating of 25V, continuous drain current of 0.22A at 25°C ambient, and peak drain current of 0.5A. The on-resistance is typically 5Ω at 2.7V gate drive and 4Ω at 4.5V gate drive. The gate threshold voltage is less than 1.06V, allowing direct operation from 3V logic. Gate charge is 0.7nC and input capacitance is 9.5pF.
The device is housed in a surface mount SOT-23-3 package and is supplied in tape and reel packaging with 3000 pieces per reel. Maximum power dissipation is 0.35W at 25°C ambient, with a junction-to-ambient thermal resistance of 357°C/W. Operating junction temperature range is -55°C to 150°C.
Environmental compliance includes Pb-Free and Halide-Free certification (verified from datasheet). RoHS3 compliance and REACH unaffected status are noted but unverified. Moisture sensitivity level is 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.22 | $0.22 |
| 10+ | $0.14 | $0.14 |
| 50+ | $0.10 | $0.10 |
| 100+ | $0.08 | $0.08 |
| 500+ | $0.06 | $0.06 |
| 3,000+ | $0.04 | $0.04 |
| 6,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDV301N is available in a surface mount SOT-23-3 package.
The operating junction temperature range is -55°C to 150°C.
RoHS3 compliance is indicated but unverified.
The maximum drain-source voltage is 25V.
The continuous drain current is 0.22A at 25°C ambient.
The maximum gate threshold voltage is 1.06V at 250µA drain current.
The maximum on-resistance is 4Ω at Vgs=4.5V and Id=0.4A.